3DD13005ED-262 Datasheet

3DD13005ED

Datasheet specifications

Datasheet's name 3DD13005ED
File size 60.341 KB
File type pdf
Number of pages 13

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Jilin Sino-Microelectronics 3DD13005ED-262
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 4A
  • Power Dissipation (Pd): 75W
  • Transition Frequency (fT): 4MHz
  • DC Current Gain (hFE@Ic,Vce): 20@500mA,10V
  • Collector Cut-Off Current (Icbo): 100uA
  • Collector-Emitter Breakdown Voltage (Vceo): 400V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@2A,400mA
  • Package: TO-262
  • Manufacturer: Jilin Sino-Microelectronics

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